Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Patent
1994-06-03
1995-01-31
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
257106, 257481, 257603, 257605, H01L 2990
Patent
active
053861388
ABSTRACT:
A semiconductor device including first and second diodes which are provided on the same side of a semiconductor substrate of a first conductivity type and which are connected in series with each other through the substrate. A main surface of the substrate is covered with an insulator film having first and second windows. A first patterned conductive film of a second conductivity type is in contact with the main surface of the substrate through the first window. The first conductive film and the substrate forme a p-n junction of a first diode at their interface. A second patterned conductive film is formed on the first conductive film acting as one of electrodes of the semiconductor device. A first conductive region of the second conductivity type is formed in a surface area of the substrate adjacent to the main surface. The first conductive region and the substrate form a p-n junction of a second diode at their interface. A third patterned conductive film acting as the other of the electrodes is in contact with the first conductive region through the second window. The die bonding and wire bonding methods are available and various types of packages be applied for the device.
REFERENCES:
patent: 4948989 (1990-08-01), Spratt
NEC Corporation
Wojciechowicz Edward
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