Semiconductor device with different lattice properties

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Reexamination Certificate

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C257S019000, C257S020000, C257S018000, C257S618000, C257S347000, C257S189000, C257S353000, C257S903000, C257S194000, C257S330000, C257S192000

Reexamination Certificate

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11494445

ABSTRACT:
To reduce a current loss through a channel and improve electron mobility, a first semiconductor layer and a second semiconductor layer (sequentially formed on a semiconductor substrate) have different lattice properties. The first semiconductor layer and the second semiconductor layer may be etched to form a first semiconductor pattern. A third semiconductor layer having a lattice property substantially identical to that of the first semiconductor layer may be formed over the first semiconductor pattern. The third semiconductor layer may then be etched to form a second semiconductor pattern. A gate may be formed on the second semiconductor pattern. The contact surface between the second semiconductor pattern and the gate pattern may consequently increased to reduce a current loss. Further, the lattice properties may be changed to improve electron mobility of the semiconductor layers.

REFERENCES:
patent: 5879996 (1999-03-01), Forbes
patent: 6300182 (2001-10-01), Yu
patent: 6774390 (2004-08-01), Sugiyama et al.
patent: 6855990 (2005-02-01), Yeo et al.
patent: 6867428 (2005-03-01), Besser et al.
patent: 6921982 (2005-07-01), Joshi et al.
patent: 7064019 (2006-06-01), Fried et al.
patent: 7098477 (2006-08-01), Zhu et al.
patent: 7112832 (2006-09-01), Orlowski et al.
patent: 2004/0175853 (2004-09-01), Inoue et al.
patent: 2004/0217420 (2004-11-01), Yeo et al.
patent: 2005/0017377 (2005-01-01), Joshi et al.

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