Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With contact or metallization configuration to reduce...
Reexamination Certificate
2005-10-11
2005-10-11
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With contact or metallization configuration to reduce...
C257S526000, C257S546000, C257S549000, C257S552000, C257S565000, C257S584000, C257S691000, C257S698000, C257S728000, C257S725000
Reexamination Certificate
active
06953981
ABSTRACT:
The present invention relates to a semiconductor device arranged at a surface of a semiconductor substrate having an initial doping having an electrical connection comprising at least one plug made of a material with a high conductivity, especially a material other than the substrate, especially a metal plug, between said initially doped substrate and said surface of the substrate. The device has at least one ground connection arranged to be connected to a ground pin on a package. The ground connection is arranged to be connected to said ground pin using said electrical connection, where the initially doped substrate is arranged to be connected to said ground pin via a reverse side of the substrate, opposite said surface, and thereby being arranged to establish a connection between said ground connection and said ground pin.
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Johansson Ted
Nyström Christian
Rydin Arne
Burns Doane , Swecker, Mathis LLP
Flynn Nathan J.
Mandala Jr. Victor A.
Telefonaktiebolaget LM Ericsson (publ)
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