Semiconductor device with deep grip accessible via the surface a

Details Semiconductor device with deep grip accessible via the surface a Semiconductor device with deep grip accessible via the surface a

1984-01-16

1985-06-04

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29577R, 29578, 29580, 29576W, 148 15, 148187, 148188, 357 41, 357 49, 357 55, 357 59, 156644, 156643, 156646, H01L 2980, H01L 2702, H01L 2176

Patent

active

045205523

ABSTRACT:
A semiconductor device with deep grid accessible via the surface having a silicon substrate and comprising U-shaped grooves. The upper parts of the side walls of these grooves are insulated by a silica layer and the lower parts of these grooves connect up with overdoped zones. Polycrystalline silicon provides ohmic contact between selected positions on the upper face of the transistor and the grid layer.

REFERENCES:
patent: 4353086 (1982-10-01), Jaccodine et al.

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