Patent
1989-02-03
1990-10-09
James, Andrew J.
357 231, 357 2314, 357 34, 357 41, 357 52, H01L 2978, H01L 2972, H01L 2934
Patent
active
049624113
ABSTRACT:
A semiconductor device with a current detecting function in which in place of an external resistor for detecting an operation current such as drain current or collector current of a device such as an FET or bipolar transistor, a probe electrode is formed in proximity to the device depletion layer to connect therethrough with the device channel to generate a probe voltage corresponding to the operation current.
REFERENCES:
patent: 4072975 (1978-02-01), Ishitani
patent: 4402003 (1983-08-01), Blanchard
patent: 4605948 (1986-08-01), Martinelli
patent: 4612449 (1986-09-01), Patalong
patent: 4630084 (1986-12-01), Tihanyi
patent: 4691223 (1987-09-01), Murakami et al.
Hara Kunihiko
Ito Hiroyasu
Kuno Hironari
Saito Hirohiko
Tokura Norihito
James Andrew J.
Ngo Ngan V.
Nippondenso Co. Ltd.
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