Semiconductor device with current confinement structure

Details Semiconductor device with current confinement structure Semiconductor device with current confinement structure

1993-05-07

1995-01-17

Epps, Georgia Y.

Coherent light generators

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Semiconductor

372 45, H01S 319

Patent

active

053832132

ABSTRACT:
There is provided a semiconductor device comprising a current confinement structure capable of reducing leakage currents. The semiconductor device comprising a current confinement structure and a multiquantum barrier structure 10 disposed in said current confinement structure and having an effect of reflecting incident carriers as waves in phase conditions capable of allowing mutual enhancement of the incident and reflected waves.

REFERENCES:
patent: 5214662, Irikawa et al.
patent: 5253265 (1993-10-01), Seko et al.
IEEE Journal of Quantum Electronics, vol. 25, No. 6, Jun. 1989, pp. 1369-1375.
Electronics Letters, vol. 27, No. 1, Jan. 1991, pp. 12-13.
Appl. Phys. Lett. 55 (18), Oct. 30, 1989, pp. 1877-1878.
Jpn. J. Appl. Phys., vol. 31 (1992), pp. L1351-L1354, Part 2, No. 9B.
Electronics Letters, vol. 22, No. 19, Sep. 11, 1986, pp. 1008-1009.
IEEE Journal of Quantum Electronics, vol. 26, No. 11, Nov. 1990, pp. 2025-2035.

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