Semiconductor device with crystalline silicon-germanium-carbon a

Details Semiconductor device with crystalline silicon-germanium-carbon a Semiconductor device with crystalline silicon-germanium-carbon a

1988-07-08

1989-12-05

James, Andrew J.

Alloys or metallic compositions

Aluminum base

Copper containing

357 4, 357 30, 357 61, 420556, H01L 29161

Patent

active

048856142

ABSTRACT:
The present invention discloses a semiconductor device comprising a semiconductor layer being made of monocrystalline silicon or silicon-germanium alloy and a semiconductor layer being made of silicon-germanium-carbon alloy formed thereon, wherein the two layers form a heterojunction therebetween. In such a device, no lattice mismatch occurs between the layers or even if lattice mismatch occurs, it is only slight, so that the silicon-germanium-carbon alloy layer is in no danger of causing misfit dislocation therein.

REFERENCES:
patent: 3721583 (1973-03-01), Blakeslee
patent: 4213781 (1980-07-01), Norieka et al.
patent: 4492810 (1985-01-01), Ovshinsky et al.
patent: 4495262 (1985-01-01), Matsuzaki et al.
patent: 4766092 (1988-08-01), Kuroda et al.
patent: 4769341 (1988-09-01), Luryi
Milnes, A. G., Solid State Elec., vol. 29, No. 2, pp. 99-121, 1986, "Semiconductor on Overview".

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