Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents
Reexamination Certificate
2010-03-10
2011-12-06
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With provision for cooling the housing or its contents
C257S722000
Reexamination Certificate
active
08072061
ABSTRACT:
Some embodiments discussed herein include a semiconductor having a source region, a drain region and an array of fins operatively coupled to a gate region controlling current flow through the fins between the source region and the drain region. The semiconductor also has at least one cooling element formed at least in part of a material having a heat capacity equal to or larger than the heat capacity of the material of the source region, drain region and array of fins, the cooling elements being in close vicinity to fins of the array of fins electrically isolated from the fins of the array, the source region and the drain region.
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Gossner Harald
Russ Christian
Schneider Jens
Schulz Thomas
Infineon - Technologies AG
Infineon Technologies
Le Thao P.
Schlazer Philip H.
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