Semiconductor device with controlled negative differential resis

Details Semiconductor device with controlled negative differential resis Semiconductor device with controlled negative differential resis

1988-10-14

1991-06-04

Hille, Rolf

357 16, 357 4, 357 13, H01L 2980

Patent

active

050218417

ABSTRACT:
The disclosed invention utilizes a homojunction tunneling mechanism of injection into the channel of a modulation doped field effect transistor. The onset of negative differential resistance can be controlled via the gate of the field effect transistor. In one embodiment there is homojunction tunneling within a bipolar field effect structure.

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