Semiconductor device with conductive rectifying rods

Details Semiconductor device with conductive rectifying rods Semiconductor device with conductive rectifying rods

1986-12-11

1991-01-08

Mintel, William

357 15, 357 7, 357 60, 357 55, 357 88, H01L 2980

Patent

active

049840371

ABSTRACT:
A semiconductor device, specifically an FET, having a body which includes a matrix of semiconductor material, specifically silicon, having an array of individual rods of conductive material, specifically TaSi.sub.2, disposed therein. The rods form Schottky barriers with the semiconductor material. A gate contact is made to several of the rods at one end, and source and drain contacts are made to the matrix of semicondcutor material. Current flow in the semiconductor material of the matrix between the source and the drain is controlled by applying biasing potential to the gate contact to enlarge the depletion zones around the rods.

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