Semiconductor device with conductive interconnect

Details Semiconductor device with conductive interconnect Semiconductor device with conductive interconnect

2007-09-14

2010-10-19

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S773000

Reexamination Certificate

active

07816792

ABSTRACT:
One or more embodiments are related to a semiconductor structure, comprising: a semiconductor chip; a conductive layer comprising at least a first conductive pathway and a second conductive pathway spacedly disposed from the first conductive pathway, the first conductive pathway electrically coupled to the chip, at least a portion of the first conductive pathway disposed outside the lateral boundary of the chip, at least a portion of the second conductive pathway disposed outside the lateral boundary of the chip; and a conductive interconnect disposed outside the lateral boundary of the chip, the conductive interconnect electrically coupling the first conductive pathway to the second conductive pathway.

REFERENCES:
patent: 5834825 (1998-11-01), Imai
patent: 7061123 (2006-06-01), Chee et al.
patent: 7300824 (2007-11-01), Sheats
patent: 7429779 (2008-09-01), Itoi et al.
patent: 7498656 (2009-03-01), Zhang et al.
patent: 2006/0181385 (2006-08-01), Hurley
patent: 2007/0040258 (2007-02-01), Sheats
patent: 2007/0284726 (2007-12-01), Lin et al.
patent: 2008/0308917 (2008-12-01), Pressel et al.
patent: 2009/0072388 (2009-03-01), Tews et al.

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