Semiconductor device with components embedded in backside...

Details Semiconductor device with components embedded in backside... Semiconductor device with components embedded in backside...

2002-03-26

2003-11-18

Tran, Minh Loan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S712000, C257S713000, C257S706000, C257S707000, C257S708000, C257S924000

Reexamination Certificate

active

06649937

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Technical Field of the Invention
This invention relates. generally to semiconductor devices, and more specifically to a semiconductor device having a backside layer of high thermal conductivity, low electrical conductivity material in which are embedded one or more components such as capacitors.
2. Background Art
Semiconductor devices include components such as transistors fabricated on the “front side” of a silicon or other semiconductor die, such as that of FIG.
1
. Recently, it has become known to fabricate a layer of high thermal conductivity material on the “back side” of the die, to improve thermal conductivity from the die to a heat sink or other thermal solution coupled to the back side of the die, such as that of FIG.
2
. Diamond is one especially advantageous material for this purpose, because of its unusually high thermal conductivity of approximately 2,300W/mK.


REFERENCES:
patent: 5391914 (1995-02-01), Sullivan et al.

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