Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1993-04-07
1994-11-22
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257195, 257274, H01L 2980, H01L 29205
Patent
active
053671830
ABSTRACT:
Disclosed is a system with at least two complementary transistors, having n and p channels but comprising a heterostructure of junctions between III-V group materials. In order to balance the threshold voltages in the two channels, namely the n (2DEG) and p (2DHG) channels, at least two p and n delta doped layers are included in two layers of the heterostructure, at levels included between the channels (2DEG, 2DHG) and the gate electrodes. The n delta doped layer is then removed by localized etching right above the p channel transistor. Application to fast logic circuits.
REFERENCES:
patent: 3992715 (1976-11-01), Delagebeaudeuf et al.
patent: 4176366 (1979-11-01), Delagebeaudeuf et al.
patent: 4186407 (1980-01-01), Delagebeuadeuf et al.
patent: 4455564 (1984-06-01), Delagebeaudeuf et al.
patent: 4568843 (1986-02-01), Gloanee et al.
patent: 4780748 (1988-10-01), Cunningham et al.
patent: 4830980 (1989-05-01), Hsieh
patent: 4872049 (1989-10-01), Derewonko et al.
patent: 4974038 (1990-11-01), Delagebeaudeuf et al.
patent: 4994868 (1991-02-01), Geissberger et al.
patent: 5031012 (1991-07-01), Cunningham et al.
patent: 5043607 (1991-08-01), Danckaert et al.
patent: 5045727 (1991-09-01), Danckaert et al.
patent: 5060234 (1991-10-01), Schubert et al.
patent: 5068756 (1991-11-01), Morris et al.
patent: 5093695 (1992-03-01), Cunningham et al.
patent: 5130766 (1992-07-01), Arimoto et al.
patent: 5144379 (1992-09-01), Eshita et al.
patent: 5151758 (1992-09-01), Smith
patent: 5216260 (1993-06-01), Schubert et al.
patent: 5223724 (1993-06-01), Green, Jr.
patent: 5254863 (1993-10-01), Battersby
IEEE Transactions on Electron Devices, vol. Ed.-33, No. 5, May 1986, "The Delta-Doped Field-Effect Transistor (FET)", E. F. Schubert, A. Fischer & K. Ploog.
Japanese Journal of Applied Physics, vol. 24, No. 8, Aug. 1985, pp. L608-L610, "The .epsilon.-Doped F Field Effect Transistor", E. F. Schubert and K. Ploog.
Patent Abstracts of Japan, vol. 11, No. 208 (E-542)(2735) Sep. 17, 1987 & JP-A-62 089 365, K. Tsumenobu, "Semiconductor Device".
Third International Conference on Indium Phosphide and Related Materials, Apr. 1991, Cardiff Wales, Great Britain, pp. 238-241, S. Swirhun, et al., "P- and N-Channel InAlAs/InGaAs . . . ".
Solid State Technology, vol. 34, No. 11, Nov. 1991, p. 26 (FIG.), "New GaAs IC Technology".
Patent Abstracts of Japan, vol. 11 No. 130 (E-502) Apr. 23, 1987 & JP-A-61 276 269, S. Masahiko, "Hetero-Junction Type Field-Effect Transistor".
Delagebeaudeuf Daniel
Perea Ernesto
Hille Rolf
Thomson-CSF Semiconducteurs Specifiques
Williams Alexander Oscar
LandOfFree
Semiconductor device with complementary transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device with complementary transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with complementary transistors will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1992914