Semiconductor device with cleaved surface

Details Semiconductor device with cleaved surface Semiconductor device with cleaved surface

1996-12-19

1998-05-19

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With specified crystal plane or axis

257 94, 257200, 257352, 372 44, 372 45, H01L 2904, H01L 31036

Patent

active

057539669

ABSTRACT:
A semiconductor light emitting device is prepared by the steps of forming a semiconductor layer 2 having a laminated structure containing at least a first cladding layer 6, a light emitting layer 7, and a second cladding layer 8 on a substrate 1 having {11-20} plane (plane a) as the main plane; and breaking integrally the semiconductor layer 2 and the substrate 1 under a heating condition to form a pair of facets on the above described substrate due to the plane which was cleaved in {1-102} plane (plane r) and at the same time, to form a pair of facets 3 extending along the above described pair of facets of the substrate 1 on the semiconductor layer 2.

REFERENCES:
patent: 5604763 (1997-02-01), Kato et al.
Japanese application No. 8-153931, published Jun. 11, 1996 and English abstract.

Affiliated with

Also associated with

Rating

Semiconductor device with cleaved surface does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with cleaved surface, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with cleaved surface will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1855580