Semiconductor device with channel stop trench and method

Details Semiconductor device with channel stop trench and method Semiconductor device with channel stop trench and method

2008-09-30

2010-10-19

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S206000, C438S209000, C438S270000, C438S589000, C257S398000, C257S399000, C257S400000, C257S652000, C257SE29016, C257SE21551

Reexamination Certificate

active

07816229

ABSTRACT:
A semiconductor device is provided which includes a semiconductor substrate having a first surface, an active area and a peripheral area. The semiconductor device further includes least one channel stop trench formed in the semiconductor substrate, wherein the channel stop trench extends from the first surface at least partially into the semiconductor substrate and is arranged between the active area and the peripheral area. At least one electrode is arranged in the channel stop trench. The semiconductor substrate includes at least a peripheral contact region, which is arranged in the peripheral area at the first surface of the semiconductor substrate. A conductive layer is provided and in electrical contact with the electrode arranged in the channel stop trench and in electrical contact with the peripheral contact region. The conductive layer is electrically connected to the semiconductor substrate merely in the peripheral area and electrically insulated from the semiconductor substrate in the active area.

REFERENCES:
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patent: 5877528 (1999-03-01), So
patent: 6445048 (2002-09-01), Pfirsch
patent: 7005347 (2006-02-01), Bhalla et al.
patent: 2003/0168713 (2003-09-01), Narazaki et al.
patent: 2009/0090967 (2009-04-01), Chen et al.
patent: 10343084 (2006-07-01), None

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