Semiconductor device with capacitor formed around contact hole

Details Semiconductor device with capacitor formed around contact hole Semiconductor device with capacitor formed around contact hole

2005-09-27

2005-09-27

Kim, Robert H. (Department: 2871)

Liquid crystal cells, elements and systems

Particular structure

Having significant detail of cell structure only

C349S038000, C349S039000

Reexamination Certificate

active

06950168

ABSTRACT:
A method of forming a storage capacitor in an IPS liquid crystal display device is proposed, and a technique of forming a pixel region having a high aperture ratio is provided. An anodic oxidation process at an applied voltage/voltage supply time ratio of 11 V/min is performed for insulating films used in each circuit of an electro-optical device, typically an IPS method LCD, in particular for the surface of a common electrode formed on a resin film. The amount of formation of the extra anodic oxide film can be reduced by covering with an anodic oxide film, and a liquid crystal display device with high reliability and having an electrode with superior adhesion can be manufactured.

REFERENCES:
patent: 5463483 (1995-10-01), Yamazaki
patent: 5485019 (1996-01-01), Yamazaki et al.
patent: 5576857 (1996-11-01), Takemura
patent: 5595638 (1997-01-01), Konuma et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5650636 (1997-07-01), Takemura et al.
patent: 5712495 (1998-01-01), Suzawa
patent: 5729308 (1998-03-01), Yamazaki et al.
patent: 5745207 (1998-04-01), Asada et al.
patent: 5757444 (1998-05-01), Takemura
patent: 5763899 (1998-06-01), Yamazaki et al.
patent: 5777713 (1998-07-01), Kimura
patent: 5847687 (1998-12-01), Hirakata et al.
patent: 5849611 (1998-12-01), Yamazaki et al.
patent: 5852488 (1998-12-01), Takemura
patent: 5856689 (1999-01-01), Suzawa
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5929464 (1999-07-01), Yamazaki et al.
patent: 5959599 (1999-09-01), Hirakata
patent: 5977562 (1999-11-01), Hirakata et al.
patent: 5995186 (1999-11-01), Hiroshi
patent: 5998841 (1999-12-01), Suzawa
patent: 6013930 (2000-01-01), Yamazaki et al.
patent: 6100947 (2000-08-01), Katayama
patent: 6165824 (2000-12-01), Takano et al.
patent: 6344884 (2002-02-01), Kim et al.
patent: 6630977 (2003-10-01), Yamazaki et al.
patent: 2002/0024627 (2002-02-01), Sakamoto et al.
patent: 6-160878 (1994-06-01), None
patent: 7-130652 (1995-05-01), None
patent: 9-211477 (1997-08-01), None
patent: 9-211495 (1997-08-01), None
patent: 10-247735 (1998-09-01), None
patent: 2000-122071 (2000-04-01), None

Affiliated with

Also associated with

Rating

Semiconductor device with capacitor formed around contact hole does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with capacitor formed around contact hole, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with capacitor formed around contact hole will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3433726