Semiconductor device with capacitor and fuse, and method for...

Details Semiconductor device with capacitor and fuse, and method for... Semiconductor device with capacitor and fuse, and method for...

2006-12-28

2009-06-09

Purvis, Sue (Department: 2826)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to nonconductive state

C257S529000, C257SE23149

Reexamination Certificate

active

07544543

ABSTRACT:
A semiconductor device with a capacitor and a fuse, and a method for manufacturing the same are described. The semiconductor device comprises a semiconductor substrate having a capacitor region and a fuse region defined therein, a insulating layer over the semiconductor substrate, a storage node hole formed in the insulating layer, a barrier metal in the storage node hole, a dielectric layer formed on the barrier metal and the insulating layer, a lower metal layer for a plate electrode filling the storage node hole such that it is flush with the dielectric layer, an upper metal layer for the plate electrode on the dielectric layer and lower metal layer for the plate electrode; and a fuse metal layer formed of the same material as that of the upper metal layer for the plate electrode on the dielectric layer in the fuse region.

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patent: 2003/0003721 (2003-01-01), Fortin
patent: 2003/0060009 (2003-03-01), Cheng et al.
patent: 2005/0110070 (2005-05-01), Omura
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patent: 10-2003-0001814 (2003-01-01), None
patent: 10-2003-0068828 (2003-08-01), None
patent: 10-2005-0095690 (2005-09-01), None

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