Semiconductor device with bypass capacitor

Details Semiconductor device with bypass capacitor Semiconductor device with bypass capacitor

2007-07-03

2007-07-03

Wilczewski, M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S306000, C257S758000

Reexamination Certificate

active

10893357

ABSTRACT:
A semiconductor device comprises a semiconductor substrate having first and second active regions of first conductivity type, first and second insulated electrodes crossing the first and second active regions, respectively, a third insulated electrode formed on the second insulated electrode, source/drain regions formed on both sides of the first electrode, pseudo source/drain regions formed on both sides of the second electrode, first and second power source lines formed above the second active region through an interlevel insulating layer, a first interconnection connecting the third electrode and the pseudo source/drain regions to the first power source line, and a second interconnection connecting the second electrode to the second power source line, wherein the first active region constitutes a MOS transistor and the second active region constitutes a bypass capacitor and induces an inversion layer of the second conductivity type under the second electrode structure when the power source lines are activated.

REFERENCES:
patent: 6054751 (2000-04-01), Ichikawa et al.
patent: 6147857 (2000-11-01), Worley et al.
patent: 54-069087 (1979-06-01), None
patent: 60-074470 (1985-04-01), None
patent: 60-161655 (1985-08-01), None
patent: 02-202051 (1990-08-01), None
patent: 10-150148 (1998-06-01), None
patent: 10-326868 (1998-12-01), None

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