Semiconductor device with buried electrode

Details Semiconductor device with buried electrode Semiconductor device with buried electrode

1992-01-17

1994-04-26

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257260, 257622, 257773, H01L 2980, H01L 2348

Patent

active

053069340

ABSTRACT:
A semiconductor device including a bipolar transistor, has a collector region including a first semiconductor region of the first conductivity type and a second semiconductor region of the first conductivity type having higher resistance than the first semiconductor region, a base region including a semiconductor region of the second conductivity type, and an emitter region including a semiconductor region of the first conductivity type. The semiconductor device further comprises a metal layer region for connecting the first semiconductor region and the collector electrode on the collector region provided within the second semiconductor region layer of the collector region.

REFERENCES:
patent: 4086694 (1978-05-01), U
patent: 4933732 (1990-06-01), Katoh et al.
Research Disclosure, No. 291, Jul. 1988, pp. 497-498, "A Method For Forming Contacts To Buried Semiconductor Layers".

Affiliated with

Also associated with

Rating

Semiconductor device with buried electrode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with buried electrode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with buried electrode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1713668