Semiconductor device with buried conductor and interconnection l

Details Semiconductor device with buried conductor and interconnection l Semiconductor device with buried conductor and interconnection l

1991-08-21

1994-06-21

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

257554, 257559, 257565, 257583, 257586, H01L 2972, H01L 2906

Patent

active

053230558

ABSTRACT:
A semiconductor device includes an insulating support layer on which are mounted, in succession, a conductive layer, a buried layer comprising first and second spaced portions and a semiconductor single crystal layer comprising spaced first and second portions respectively supported on the first and second spaced portions of the buried layer, the respective first and second portions having respective, first and second common sidewalls defining respective, first and second peripheries thereof and respectively comprising a transistor region and a collector electrode region. A remaining exposed surface portion of the conductive layer extends between the spaced, opposing portions of the sidewalls of the transistor and collector electrode regions. An insulating material layer is supported on the first portion remaining exposed surface portion of the conductive layer and extending between and engaging the spaced and opposed portions of the peripheral sidewalls of the transistor and collector electrode regions, and a second portion engaging and extending from the remaining portions of the peripheral sidewalls of the transistor and collector electrode regions. The conductive layer electrically couples the transistor region and the collector electrode region and further comprises an electrical interconnection layer.

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