Semiconductor device with built-up low resistance contact

Details Semiconductor device with built-up low resistance contact Semiconductor device with built-up low resistance contact

1983-07-08

1985-03-19

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 148 15, 357 71, 427 89, H01L 2348, H01L 2944

Patent

active

045050295

ABSTRACT:
A semiconductor device having particularly low resistance connection to a portion thereof carrying substantial current is described. First and second electrodes are provided on a major surface of the semiconductor, the first electrode providing lateral contact to a control region of the semiconductor device; the second electrode providing low impedance vertical contact to the high current carrying region. A conductive plate is supported between upstanding spaced apart portions of the second electrode and is thereby vertically spaced apart from the first electrode.

REFERENCES:
patent: Re27934 (1974-03-01), Merrin et al.
patent: 3392442 (1968-07-01), Napier et al.
patent: 3458925 (1969-08-01), Napier et al.
patent: 3508118 (1970-04-01), Merrin et al.
patent: 3585461 (1971-06-01), Eynon et al.
patent: 3585713 (1971-06-01), Kaneda et al.
patent: 3761309 (1973-09-01), Schmitler et al.
patent: 3881884 (1975-05-01), Cook et al.
patent: 4017886 (1977-04-01), Tomono et al.

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