Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Including additional component in same – non-isolated structure
Reexamination Certificate
2005-04-26
2005-04-26
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Including additional component in same, non-isolated structure
C257S603000
Reexamination Certificate
active
06885082
ABSTRACT:
The present invention provides a semiconductor device having a bipolar transistor constructed so as to allow the adjustment of the base input signal voltage that switches on a transistor in which a diffusion region of a different conductivity type from that of the base region is formed at the contact of the base electrode, and to allow the base current to be controlled when a digital transistor is produced. A base electrode connection region24of an n+-type is provided to a p-type base region12, and a zener voltage control diffusion region25of a p+-type is provided around the periphery of the base electrode connection region24so as to form a pn junction and undergo zener breakdown at the desired voltage. A resistor26composed of polysilicon is connected to the base electrode connection region24via a metal electrode16a. As a result, this semiconductor device has a bipolar transistor in which a zener diode ZD and the resistor26are serially built into the base.
REFERENCES:
patent: 4293868 (1981-10-01), Iizuka et al.
patent: 4672403 (1987-06-01), Jennings
patent: 20020024114 (2002-02-01), Sakamoto
patent: 58-066356 (1983-04-01), None
Rohm & Co., Ltd.
Weiss Howard
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