Semiconductor device with built-in light receiving element,...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S073000, C257S446000, C257S184000, C257S431000, C385S049000, C372S046012

Reexamination Certificate

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06846694

ABSTRACT:
A method for producing a semiconductor device with a built-in light receiving element is provided. The device comprises a light receiving element region for receiving and converting an optical signal to an electric signal, the light receiving element region being provided on a substrate. The method comprises the steps forming an anti-reflection film in the light receiving element region on the substrate, and forming a protection film, the protection film serving as an etch stop film in a subsequent etching step.

REFERENCES:
patent: 5602415 (1997-02-01), Kubo et al.
patent: 5793913 (1998-08-01), Kovacic
patent: 5893727 (1999-04-01), Lau et al.
patent: 6096581 (2000-08-01), Zhang et al.
patent: 6252286 (2001-06-01), Arai
patent: 6380603 (2002-04-01), Takimoto et al.
patent: 6689682 (2004-02-01), Ogle et al.
patent: 2000-133833 (2000-05-01), None

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