Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1994-06-16
1996-04-16
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257410, 257411, 257347, 359 59, H01L 2904, H01L 31036, H01L 310376, H01L 3120
Patent
active
055085326
ABSTRACT:
A gate insulating film covering active layers of a insulated gate field effect semiconductor device utilizing a thin film silicon semiconductor comprises a thin film having the chemical formula SiO.sub.x N.sub.y. By making the concentration of N (nitrogen) high at the interface between the gate insulating film and the gate electrodes, it is possible to prevent the material composing the gate electrodes from being diffused in the gate insulating film. By making the concentration of N (nitrogen) high at the interface between the gate insulating film and the active layers, it is possible to prevent hydrogen ions and other ions from diffusing into the gate insulating film from the active layer.
REFERENCES:
patent: 4416952 (1983-11-01), Nishizawa et al.
patent: 4868632 (1989-09-01), Hayashi et al.
Ferguson Gerald J.
Mintel William
Semiconductor Energy Laboratory Co,. Ltd.
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