Semiconductor device with bonding pad electrode

Details Semiconductor device with bonding pad electrode Semiconductor device with bonding pad electrode

1998-04-06

1999-10-12

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257765, 257764, 438612, H01L 2348

Patent

active

059659432

ABSTRACT:
A semiconductor device is provided to ensure electrical connection with a probe needle and also provide ready maintenance of the probe needle. The semiconductor device includes a silicon substrate, a bonding pad electrode layer formed on the silicon substrate, and a rhenium layer formed on the bonding pad electrode layer.

REFERENCES:
patent: 5510651 (1996-04-01), Maniar et al.
patent: 5525546 (1996-06-01), Harada et al.
patent: 5554866 (1996-09-01), Nishioka et al.

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