1988-08-03
1990-04-10
James, Andrew J.
357 67, 357 68, 357 65, 357 54, H01L 2348
Patent
active
049163973
ABSTRACT:
A semiconductor device having a bonding pad for connecting lead wires comprises a semiconductor substrate, a metal silicide film, a silicon dioxide film, a metal nitride film and an aluminum film. The silicon dioxide film has an opening in a portion corresponding to the bonding pad. The metal silicide film is formed in the portion corresponding to the bonding pad on the semiconductor substrate. The metal nitride film is formed on the metal silicide film and adhered to the metal silicide film. The aluminum film is provided as a bonding pad and formed on the metal nitride film.
In a method for manufacturing the above described semiconductor device, the metal silicide film is formed on the semiconductor substrate and patterned. The silicon dioxide film is formed thereon. The opening is formed in the position corresponding to the bonding pad on the silicon dioxide film. The metal nitride film is formed in the opening. The aluminum film is formed on the metal nitride film.
REFERENCES:
patent: 3609470 (1971-09-01), Kuiper
patent: 4566026 (1986-01-01), Lee et al.
patent: 4636832 (1987-01-01), Abe et al.
Masuda Hisao
Osaka Syuichi
James Andrew J.
Mitsubishi Denki & Kabushiki Kaisha
Prenty Mark
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