Semiconductor device with bidimensional charge carrier gas

Details Semiconductor device with bidimensional charge carrier gas Semiconductor device with bidimensional charge carrier gas

1986-01-17

1987-06-30

Wojciechowicz, Edward J.

357 15, 357 16, 357 22, H01L 2906

Patent

active

046774572

ABSTRACT:
A semiconductor device having a hetero-junction (3) between a semiconductor layer (2A,B) having a larger band gap and a semiconductor layer (1) having a smaller band gap, in which a bidimensional charge carrier gas (4) is formed, which is limited to a mesa-shaped part (5) of the layer structure. According to the invention, the sidewall (6) of the mesa extends to within the semiconductor layer (2) having the larger band gap, but does not extend as far as the semiconductor layer (1) having the smaller band gap in order to avoid surface traps at the edge of the mesa. Application inter alia is in HEMT devices and ballistic transistors.

REFERENCES:
patent: 4538165 (1985-08-01), Chang et al.
patent: 4550331 (1985-10-01), Milano
patent: 4559547 (1985-12-01), Shiraki et al.

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