Semiconductor device with back gate voltage controllers for...

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C327S408000

Reexamination Certificate

active

06348831

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates generally to an integrated circuit (IC) which comprises an analog switch(es) and digital circuitry, both sharing external input and/or output terminals and being coupled to different power sources. More specifically, the present invention relates to such an IC wherein a back gate voltage controller is provided for preventing a leak current flowing through the analog switch while the switch is not in use.
2. Description of the Related Art
It is known in the art to provide, on the identical IC chip, an analog switch(es) and digital circuitry, which are respectively coupled to different power sources.
Before turning to the present invention, it is deemed advantageous to briefly describe, with reference to
FIGS. 1
to
3
, a known circuit relevant to the present invention.
Referring to
FIG. 1
, there are schematically shown an analog multiplexer
10
and a digital circuit
12
both provided on the same chip. As shown, the analog multiplexer
10
comprises a p-channel analog switch
14
, a CMOS (complementary metal oxide semiconductor) analog switch
16
, and an n-channel analog switch
18
. Although not shown in
FIG. 1
, one or more other n-channel analog switches may be coupled between the switches
16
and
18
. The p-channel analog switch
14
has the source and drain, which are respectively coupled to a voltage divider
20
and an output terminal
22
. This output terminal
22
is coupled to external circuitry (not shown) and is shared by the digital circuit
12
. The on/off operation of the analog switch
14
is implemented by a digital control signal applied to the gate thereof, via a digital inverter
24
, from a gate control terminal
26
. The back gate of the analog switch
14
is directly coupled to the power source VDD (
1
).
The CMOS analog switch
16
is constructed using two paralleled complementary MOSFETs (field-effect transistors)
16
a
and
16
b.
The source of the MOSFET
16
a
is directly coupled to the drain of the MOSFET
16
b
and the voltage divider
20
. On the other hand, the drain of the MOSFET
16
a
is directly coupled to the source of the MOSFET
16
b,
and these terminals are coupled to the output terminal
22
. The on/off operation of the CMOS analog switch is controlled by a digital control signal applied to the gates of the MOSFETs
16
a
and
16
b
from a gate control terminal
28
. It is to be noted that each of digital inverters
24
and
25
is provided to reverse the polarity of the gate control signal. The back gates of the MOSFETs
16
a
and
16
b
are respectively coupled to the power source VDD(
1
) and ground VSS.
As in the above-mentioned analog switch
14
, the n-channel analog switch
18
has the drain and source, which are respectively coupled to the voltage divider
20
and the output terminal
22
. The on/off operation of the analog switch
18
is carried out by a digital control signal applied to the gate thereof from a gate control terminal
30
. The back gate of the analog switch
18
is directly coupled to ground VSS.
When the analog multiplexer
10
is used, the digital circuit
12
is not used, and vice versa.
As shown, the digital circuit
12
comprises two complementary MOSFET switches
12
a
and
12
b
which are provided in series between a power source VDD(
2
) and ground VSS. When the MOSFETs
12
a
and
12
b
are respectively turned on and off by applying gate control signals from terminals
32
and
34
, the voltage of the power source VDD(
2
) appears at the output terminal
22
. Contrarily, when the MOSFETs
12
a
and
12
b
are respectively turned off and on, the output terminal
22
is pulled to ground.
FIG. 2
is a diagram showing the p-channel analog switch
14
of
FIG. 1
, and
FIG. 3
is a cross-sectional schematic of the structure of the switch
14
. The configuration of the p-channel analog switch per se is well known in the art and thus only a brief description thereof is given.
As shown in
FIG. 3
, a p-channel is formed between the source and the drain which are respectively p+ diffusion regions
40
and
42
formed in an n-well. The back gate (denoted by
44
) is separated from the active region by forming an isolator
46
and is directly coupled to the power source VDD(
1
). Assume that the power source VDD(
1
) is lowered for some reasons such as reducing power dissipation (for example) when the analog multiplexer
10
is not used. In this case, if the digital circuit
12
outputs the power source voltage (vix., VDD(
2
)), a current undesirably flows from the drain
42
and the source
40
to the back gate
44
because the p-n junction therebetween is forward biased. Therefore, according to the related are in question, the power source VDD(
1
) should not be lowered (vix., kept to be applied to the back gate
44
) even if the analog multiplexer
10
is not in use.
Japanese Laid-open Patent Application No. 5-276001 discloses an analog switch circuit wherein an n-channel transistor has a substrate that is selectively coupled to ground via an n-channel transistor. However, this related art fails to disclose a combination of an analog switch and digital circuitry, both sharing external input and/or output terminals and being coupled to different power sources.
However, it is highly desirable that when the analog switch is not utilized while the digital circuitry is utilized, the analog input voltage can be lowered for the purpose of power conservation.
SUMMARY OF THE INVENTION
It is therefore an object of the present invention to provide a back gate voltage controller for preventing a leak current when an analog switch is not in use even if an analog power source is lowered.
One aspect of the present invention resides in a semiconductor device comprising an analog switch and digital circuitry, both being formed on a single integrated circuit chip and sharing a node coupled to external circuitry, comprising: a first power source coupled to an input terminal of the analog switch whose output is operatively coupled to the node; a second power source for supplying electric power to the digital circuitry whose input or output is operatively coupled to the node; and a back gate voltage controller, coupled to a back gate of the analog switch, for controlling a voltage applied to the back gate in response to an operation mode control signal for determining whether the analog switch or the digital circuitry is to be enabled.


REFERENCES:
patent: 3720848 (1973-03-01), Schmidt, Jr.
patent: 3866064 (1975-02-01), Gregory et al.
patent: 4473761 (1984-09-01), Peterson
patent: 4529897 (1985-07-01), Suzuki et al.
patent: 4716319 (1987-12-01), Rebeschini
patent: 5617055 (1997-04-01), Confalonieri et al.
patent: 5880620 (1999-03-01), Gitlin et al.
patent: 6008689 (1999-12-01), Au et al.
patent: 63-98214 (1988-04-01), None
patent: 2-126426 (1990-10-01), None
patent: 3-48520 (1991-03-01), None
patent: 3-92013 (1991-04-01), None
patent: 5-276001 (1993-10-01), None
patent: 5-327436 (1993-12-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device with back gate voltage controllers for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with back gate voltage controllers for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with back gate voltage controllers for... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2952425

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.