Semiconductor device with arsenic doped silicon thin film interc

Details Semiconductor device with arsenic doped silicon thin film interc Semiconductor device with arsenic doped silicon thin film interc

1994-08-25

1995-06-20

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

257610, 257612, H01L 2348, H01L 2340, H01L 2962, H01L 2964

Patent

active

054263298

ABSTRACT:
A principal feature of the present invention is to obtain a semiconductor device including a silicon thin film for use as interconnections or an electrode. The semiconductor device includes a semiconductor substrate, and a silicon thin film provided on the semiconductor substrate. Arsenic and carbon are added in the silicon thin film. The arsenic is distributed at a uniform concentration along a depth of the silicon thin film.

REFERENCES:
patent: 4722913 (1988-02-01), Miller
"Low Temperature Si.sub.2 H.sub.6 Si Epitaxy In-Situ Doped with AsH.sub.3 /SiH.sub.4 ", by M. Sadamoto, et al, Journal of Electronic Materials, vol. 19, No. 12, 1990, pp. 1395-1402.
"GaAs Growth Using Tertiarybutylarsine and Trimethylgallium", by C. A. Larsen et al, Journal of Crystal Growth 93, 1988, pp. 15-19.
"Alternate Sources and Growth Chemistry for OMVPE and CBE Processes", by G. B. Stringfellow, Journal of Crystal Growth 105, 1990, pp. 260-270.

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