Semiconductor device with antireflection film

Details Semiconductor device with antireflection film Semiconductor device with antireflection film

1997-08-05

1998-09-01

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 50, 257 53, 257437, 257530, 257754, H01L 27108, H01L 2904, H01L 310232, H01L 2900

Patent

active

058013997

ABSTRACT:
A stress relaxation layer is inserted between an electrode layer and an antireflection layer to relax a stress imparted from one of the electrode and antireflection layers to the other. A semiconductor device is provided which can suppress separation of the antireflection film during device fabrication processes and dispense with the process of etching and removing the antireflection film.

REFERENCES:
patent: 4378628 (1983-04-01), Levinstein et al.
patent: 4609930 (1986-09-01), Yamazaki
patent: 4924294 (1990-05-01), Tanielian
patent: 5346860 (1994-09-01), Wei
patent: 5373169 (1994-12-01), McCollum et al.
patent: 5488246 (1996-01-01), Hayashide et al.

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