Semiconductor device, with an off detection circuit

Details Semiconductor device, with an off detection circuit Semiconductor device, with an off detection circuit

2007-11-13

2007-11-13

Vu, Bao Q. (Department: 2838)

Electricity: power supply or regulation systems

In shunt with source or load

Using choke and switch across source

C323S223000, C323S282000, C323S284000

Reexamination Certificate

active

11531612

ABSTRACT:
According to the present invention, a semiconductor device is provided wherein a stepdown-type DC-DC converter includes a first off detection circuit, a second off detection circuit, a capacitor, a capacitor, a diode, inverters, an inductor, a first level shift circuit, a second level shift circuit, a third level shift circuit, a 2-input NAND circuit, a 2-input NAND circuit, a high-side N-channel power MOS transistor and a low-side N-channel power MOS transistor. The first off detection circuit and the second off detection circuit reduce fall times of the gates of the N-channel power MOS transistors, thereby reducing dead time.

REFERENCES:
patent: 6472856 (2002-10-01), Groom et al.
patent: 6528976 (2003-03-01), Lenk et al.
patent: 6563294 (2003-05-01), Duffy et al.
patent: 6580627 (2003-06-01), Toshio
patent: 6858996 (2005-02-01), Green
patent: 6897682 (2005-05-01), Nadd
patent: 6979918 (2005-12-01), Aoshima et al.
patent: 6979981 (2005-12-01), Yoshikawa
patent: 7132818 (2006-11-01), Matsuura
patent: 7180274 (2007-02-01), Chen et al.

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