Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – Specified materials
Reexamination Certificate
2005-10-18
2005-10-18
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
Specified materials
C257S192000, C257S344000, C257S408000, C257S900000, C438S303000, C438S305000, C438S595000
Reexamination Certificate
active
06956276
ABSTRACT:
Provided is a semiconductor device, comprising a gate electrode formed on a semiconductor substrate, source/drain diffusion layers formed on both sides of the gate electrode, a gate electrode side-wall on the side of the source/drain diffusion layer and a gate side-wall insulating film covering a part of the upper surface of the semiconductor substrate in the vicinity of the gate electrode and having an L-shaped/reversed L-shaped cross-sectional shape, and a semiconductor layer extending over the gate side-wall insulating film covering a part of the upper surface of the semiconductor substrate in the vicinity of the gate electrode.
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Office Action, dated Apr. 2, 2004, from the Chinese Patent Office for Patent Application No. 01143945.9.
Kabushiki Kaisha Toshiba
Nelms David
Pillsbury & Winthrop LLP
Tran Mai-Huong
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