Semiconductor device with an ion implanted stabilization layer

Details Semiconductor device with an ion implanted stabilization layer Semiconductor device with an ion implanted stabilization layer

1979-03-09

1985-01-29

Clawson, Jr., Joseph E.

357 52, 357 91, H01L 2980

Patent

active

044969635

ABSTRACT:
A semiconductor device wherein surface stabilization is provided by a shallow layer of ion implanted doping material on the surface of the semiconductor and beneath the passivating oxide layer. One embodiment is a bipolar transistor including a collector region, a base region and an emitter region, the base region being provided with the shallow ion implanted layer at the surface thereof. Another embodiment is a zener diode device with an anode region and a cathode region, the cathode region being provided with the shallow ion implanted layer at the surface thereof. Another embodiment is a JFET with a gate region and a source and drain region and a channel region extending through the gate region between the source and drain regions, the channel region being provided with the shallow ion implanted layer at the surface thereof.

REFERENCES:
patent: 2954486 (1960-09-01), Doucette et al.
patent: 3223904 (1965-12-01), Warner et al.
patent: 3335342 (1967-08-01), Leistiko et al.
patent: 3383567 (1968-05-01), King et al.
patent: 3538399 (1970-11-01), Bresee et al.
patent: 3656031 (1972-04-01), Bresee et al.

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