Semiconductor device with an inductive element

Details Semiconductor device with an inductive element Semiconductor device with an inductive element

2005-03-15

2005-03-15

Tran, Minh-Loan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S277000, C257S379000, C257S516000, C438S210000, C438S329000

Reexamination Certificate

active

06867475

ABSTRACT:
There is provided a semiconductor device able to prevent performance degradation of an inductor element provided thereon. A high resistance region is provided below the inductor element formed on the semiconductor substrate. The high resistance region is formed deeper than the well regions of the p-channel and n-channel MOS transistors, thus preventing induction of an eddy current by the magnetic flux generated from the inductor element.

REFERENCES:
patent: 6426543 (2002-07-01), Maeda et al.
patent: 6452249 (2002-09-01), Maeda et al.
patent: 20010048135 (2001-12-01), Leipold
patent: 20030151115 (2003-08-01), Kanematsu

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