Semiconductor device with an improved transmission line

Details Semiconductor device with an improved transmission line Semiconductor device with an improved transmission line

2006-02-28

2006-02-28

Tran, Mai-Huong (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

With shielding

C455S327000, C333S001000, C333S112000, C333S116000, C333S118000, C333S120000, C333S128000, C333S138000

Reexamination Certificate

active

07005726

ABSTRACT:
A semiconductor device with integrated circuits includes superimposed layers provided at different levels on a substrate, and including a metal strip (3) formed in a reference layer and through which an electric current passes, a metal ground plane (4) formed in a layer situated at a level lower than the reference layer and having a slit (5) which lies below the strip while running alongside it, an electrostatic shield (6) formed in a layer located at a level lower than the ground plane and comprising a multiplicity of spaced out bands (7), made of an electrically-conducting material, that extends across the slit, and conducting junctions (4a, 4b) making it possible to electrically connect the ends of each band to the parts of the ground plane situated on either side of its slit.

REFERENCES:
patent: 5634208 (1997-05-01), Nishikawa et al.

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