Semiconductor device with an exposed external-connection...

Electricity: conductors and insulators – Conduits – cables or conductors – Preformed panel circuit arrangement

Reexamination Certificate

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Details

C174S256000, C174S260000, C361S768000, C361S771000, C361S779000

Reexamination Certificate

active

06660942

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a packaging technique for electronic parts. More particularly, the present invention relates to a wiring substrate capable of packaging electronic parts in accordance with the COB (chip-on-board) system, a method of manufacturing the wiring substrate, and a semiconductor device using the wiring substrate. The “electronic part” used herein refers to various kinds of parts that can be mounted on the wiring substrate. Specifically, the electronic parts include semiconductor elements such as IC chips and LSI chips, passive elements, and a power source. Therefore, the semiconductor device of the present invention can also be referred to as an electronic device.
2. Description of the Related Art
Recently, there have been many requests for reduction in size, reduction in thickness, and reduction in weight of devices, as well as increase in performance, in the fields of electronic devices such as personal computers, portable telephones, and PHS's. In order to meet these requests, techniques of packaging semiconductor elements on wiring substrates have been developed and practically used.
Various packaging techniques have already been known. As one of these techniques, there is a flip-chip bonding method. The flip-chip bonding method is for directly mounting a semiconductor element onto a wiring substrate through a metal bump disposed between a pad of the wiring substrate and an external-connection terminal of the semiconductor element. This method does not use a conductive wire, that cannot match with a complex structure having complex wiring, for electrically connecting and mounting the semiconductor element onto the wiring substrate. When the metal bump is melted under a heat treatment, it is possible to electrically connect the semiconductor element onto the wiring substrate, by fixing the pad of the wiring substrate and the external-connection terminal of the semiconductor element together. According to this method, however, thermal stress attributable to a difference between the coefficient of thermal expansion of the wiring substrate and that of the semiconductor element is concentrated onto the metal bump, and this damages the bump, itself, when the metal bump is heated to melt it.
In order to solve the above problems, various trials have been made to relax the stress through the improvement in a packaging structure. For example, there is a method of filling a resin into a gap between a wiring substrate and a semiconductor element after the pad of the wiring substrate and the external-connection terminal of the semiconductor element have been fixed together with a metal bump. This method is called an under-fill structure method. It is possible to prevent damage to the metal bump by reinforcing the mechanical strength of the bump relying upon the mechanical strength of the resin. However, according to this method, it is not possible to completely avoid damage to the bump, as the concentration of the thermal stress onto the bump is not prevented.
In order to prevent the thermal stress from being concentrated onto the bump, there is a method of disposing a sheet-like thermosetting resin type adhesive into the gap between a wiring substrate and a semiconductor element, instead of filling a resin into this gap. According to this method, the semiconductor element is disposed on the wiring substrate via the adhesive. Then, the semiconductor element is thermally compressed, so that the adhesive is cured in a state that the metal bump has been connected to the pad of the wiring substrate. When the temperature of the semiconductor element has been returned to room temperature, a compressive force like thermal compressive force is generated in the cured adhesive. Based on this compressive force, the metal bump is pressed against the pad of the wiring substrate. According to this method, the terminal of the semiconductor element and the pad of the wiring substrate are not fixed together via the metal bump. Therefore, it is possible to prevent the concentration of the thermal stress attributable to the difference between the coefficient of thermal expansion of the wiring substrate and that of the semiconductor element onto the metal bump. However, according to this method, when the coefficient of thermal expansion of the adhesive is larger than that of the metal bump, there arises a gap between the bump and the pad at the time of a testing temperature cycle. This brings about a problem of a poor connection between the bump and the pad.
In order to improve the reliability of the connection between the pad of the wiring substrate and the metal bump, a semiconductor device as shown in
FIG. 1
has been proposed in Japanese Unexamined Patent Publication (Kokai) No. 10-270496. In this semiconductor device, a semiconductor chip
60
is mounted on the packaging surface of a wiring substrate
51
having a rigid substrate
52
via an adhesive
66
. An external-connection terminal
63
of the semiconductor chip
60
is connected to a pad
54
A of the wiring substrate
51
via a bump electrode
65
. Particularly, in the case of the semiconductor device shown in
FIG. 1
, a recess
54
B is formed on the pad
54
A, and the pad
54
A and the bump electrode
65
are connected together within this recess
54
B. The pad
54
A is formed on the surface of an elastic layer
53
. The recess
54
B of the pad
54
A is formed based on an elastic deformation of the pad and the elastic layer
53
. The elastic layer
53
is formed with an epoxy-type low-elasticity resin having a lower coefficient of thermal expansion than that of the adhesive. When this structure is employed, it is possible to reduce the gap between the wiring substrate
51
and the semiconductor chip
60
by the volume corresponding to the concave volume of the recess
54
. Therefore, it is possible to lower the thermal expansion of the adhesive in its thickness direction as a result of the reduction in the thickness of the adhesive. As a result, it is possible to prevent the occurrence of a poor connection at the time of the temperature cycle test.
SUMMARY OF THE INVENTION
As described above, various studies have so far been carried out and proposals have been made on methods useful for increasing the reliability of the connection between the pad of the wiring substrate and the metal bump. However, all the methods entrust the stress relaxation to the improvement in the package structure. Therefore, these methods lead to a complex structure, which complicates the manufacture process and causes an increased manufacturing cost.
It is, therefore, an object of the present invention to provide a wiring substrate capable of increasing the reliability of the connection between a pad of a wiring substrate and an electronic part like a semiconductor chip, without complicating the structure and the manufacturing process.
It is another object of the present invention to provide a method suitable for manufacturing this wiring substrate.
It is still another object of the present invention to provide a semiconductor device that uses this wiring substrate.
The above objects and other objects of the present invention will be easily understood from the following detailed explanation.
As a result of a concentrated study for achieving the above objects, the present inventors have found that the improvement in the wiring substrate in place of the improvement in the package, along with movable wiring of a conductive pattern on the wiring substrate, are effective for achieving the objects.
According to one aspect of the present invention, there is provided a wiring substrate equipped with a rerouted wiring having one end connected to an electronic-part mounting pad for electrically connecting an electronic part and another end connected to an external-connection terminal. In this wiring substrate, a low-elasticity underlayer, i.e., underlayer made of a material having a lower modulus of elasticity than that of a base material of the wiring substrate is disposed between the base m

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