Semiconductor device with an active layer having a plurality of

Details Semiconductor device with an active layer having a plurality of Semiconductor device with an active layer having a plurality of

1997-03-12

1999-04-13

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 59, 257 69, 257 72, 257285, 257287, 257347, 257506, 438166, 438175, 438486, 438571, H01L 31036

Patent

active

058941371

ABSTRACT:
There is provided a technique for fabricating a thin film transistor having excellent performance. A configuration is employed in which when the thin film transistor is in an on-state, the flowing direction of the on-current coincides with the direction of crystal growth. With such a configuration, grain boundaries of the crystalline silicon in the active layer will not block the on-current. Further, when the thin film transistor is in an off-state, the off-current is always orthogonal to the grain boundaries of the crystalline silicon. The grain boundaries of the crystalline silicon effectively suppresses the off-current in such locations.

REFERENCES:
patent: 5604360 (1997-02-01), Zhang et al.

Affiliated with

Also associated with

Rating

Semiconductor device with an active layer having a plurality of does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with an active layer having a plurality of , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with an active layer having a plurality of will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-224218