Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays
Patent
1998-06-09
2000-05-23
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
257204, 257206, 257390, H01L 2710, H01L 2976, H01L 2994
Patent
active
060668660
ABSTRACT:
When constructing a number of transistors in transistor forming region (1) on a semiconductor substrate, a plurality of specific functional regions and a plurality of general-purpose functional regions are formed in the transistor forming region (1) in such a way that each of the plurality of specific functional regions alternates with each of the plurality of general-purpose functional regions. Each of the plurality of general-purpose functional regions is comprised of at least one general-purpose functional bank (4) including a row of P-channel field-effect transistors and a row of N-channel field-effect transistors. Each of the plurality of specific functional regions is comprised of at least one specific functional bank (5) including a row of functional blocks (6) each of which can perform a specific function.
REFERENCES:
patent: 4161662 (1979-07-01), Malcolm et al.
patent: 4750027 (1988-06-01), Asami
patent: 4786613 (1988-11-01), Gould et al.
patent: 5060046 (1991-10-01), Shintani
patent: 5404034 (1995-04-01), Yin
patent: 5663662 (1997-09-01), Kurosawa
Fenty Jesse A.
Mitsubishi Denki & Kabushiki Kaisha
Saadat Mahshid
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