Active solid-state devices (e.g. – transistors – solid-state diode – Alignment marks
Reexamination Certificate
2006-04-25
2006-04-25
Tran, Thien F. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Alignment marks
C438S462000
Reexamination Certificate
active
07034406
ABSTRACT:
A semiconductor device includes an alignment mark arranged on a surface, and including a high reflectance portion and a flat low reflectance portion; and a first silicon oxide film formed internally and provided with a plurality of first embedded portions filled with a material different from a material of portions around the embedded portions. The first embedded portions are formed in at least a portion of a region avoiding a portion shaded by projecting the high reflectance portion onto the silicon oxide film.
REFERENCES:
patent: 5528372 (1996-06-01), Kawashima
patent: 6858948 (2005-02-01), Van Haren
patent: 7-335721 (1995-12-01), None
patent: 2001-168194 (2001-06-01), None
Ido Yasuhiro
Iwamoto Takeshi
Kono Kazushi
Renesas Technology Corp.
Tran Thien F.
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