Semiconductor device with air gaps between interconnections and

Details Semiconductor device with air gaps between interconnections and Semiconductor device with air gaps between interconnections and

1998-04-07

2000-08-15

Wojciechowicz, Edward

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having air-gap dielectric

438619, 438637, 438638, 438675, H01L 2972

Patent

active

061035912

ABSTRACT:
The present invention provides a method of forming a semiconductor device. The method comprises the following steps. At least a first opening and at least a second opening are concurrently formed in a dielectric layer which has a bottom portion having first level interconnections so that the first and second openings have a bottom level which lies over the first level interconnections. A dielectric film is deposited over the dielectric layer to form an inter-layer insulator so that top portions of the first and second openings are sealed with the dielectric film so as to form at least a first hollow portion and at least a second hollow portion serving as an air gap. A plurality of grooves are selectively formed in an upper portion of the inter-layer insulator so that at least one of the grooves extend on a top portion of the first hollow portion whereby the top portion of the first hollow portion reaches a bottom of the groove, and also so that the second hollow portion is disposed between adjacent two of the grooves. A bottom of the first hollow portion is selectively etched so that the bottom of the first hollow portion reaches a top of one of the first level interconnections so as to form a through hole which connects the at least one of the grooves to the one of the first level interconnections. Second level interconnections are formed in the grooves and a contact layer is formed in the through hole.

REFERENCES:
patent: 5585662 (1996-12-01), Ogawa
"Damascene", pp. 179-184, Semiconductor World, Dec. 1995 and (Abridged English translation).

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