Semiconductor device with adjacent non-oxide layers and the fabr

Details Semiconductor device with adjacent non-oxide layers and the fabr Semiconductor device with adjacent non-oxide layers and the fabr

1987-12-16

1991-06-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437235, 437238, 437239, 156625, 156646, 156653, 148DIG17, H01L 2100, H01L 2102, C23C 1500

Patent

active

050232061

ABSTRACT:
A semiconductor device is disclosed in which a deposited non-oxide layer (44) overlies and physically contacts another non-oxide layer (38) so that no intervening oxide layer is present. The device is fabricated by performing an insitu etch and deposition process. In one embodiment, the device (36) is sealed in a LPCVD chamber (10) and etched using gaseous anhydrous hydrofluoric acid to remove an oxide (40) from one non-oxide layer (38). Then, without exposing the device to a water rinse or to the atmosphere, a chemical vapor deposition process applies the deposited layer (44) upon the other layer (38).

REFERENCES:
patent: 4579609 (1986-04-01), Reif et al.
patent: 4605479 (1986-08-01), Faith, Jr.
Sze, S. VLSI Technology, Chapter 3, pp. 93-94, McGraw-Hill, 1983.
Vossen, J., Preparation of Surfaces for High Quality Interface Formation, J. Vac. Sci. Tech. A2(2), Jun. 1984, pp. 212-215.

Affiliated with

Also associated with

Rating

Semiconductor device with adjacent non-oxide layers and the fabr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with adjacent non-oxide layers and the fabr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with adjacent non-oxide layers and the fabr will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-782519