Semiconductor device with active quantum well gate

Details Semiconductor device with active quantum well gate Semiconductor device with active quantum well gate

1992-06-16

1993-06-22

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257289, 257366, H01L 29161, H01L 29205, H01L 29225

Patent

active

052218490

ABSTRACT:
A field effect semiconductor device having multiple vertically stacked channels (12, 14, 16) separated by independent gate electrodes (13, 15) is provided. The channels (12, 14, 16) are formed on a wide bandgap buffer layer (11) and each channel is coupled a drain electrode (21). Each channel is also coupled to a source electrode (25-26). The quantum well channels (12, 14, 16) and quantum well gates (13, 15) are separated from each other by barrier layers (18) of a wide bandgap semiconductor material.

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patent: 4817103 (1989-03-01), Holonyak, Jr. et al.
patent: 4821093 (1989-04-01), Iafrate et al.
Beresford et al, `Interband Tunneling . . . `, Apply Phys Lttr, 56(10), Mar. 5, 1990, pp. 952-954.
Zhu et al, `Exitonic Insulator Trans . . . ` Solid State Comm, vol. 75, No. 7, pp. 595-599, 1990.
Sercel et al, `Concept for Self Doping Semi . . . `, Appl Phys Lttr, 57(15), Oct. 8, 1990, pp. 1569-1571.
Eisenstein et al, `Field Induced Resonant Tunneling . . . `, Appl Phys Lttr, 58(14), Apr. 8, 1991, 1497-1499.

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