Semiconductor device with a tantalum iridium barrier layer conta

Thermal measuring and testing – Temperature measurement – Composite temperature-related paramenter

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357 28, 357 34, 357 2, 357 71, 357 68, 357 65, 374178, 307310, H01L 2348, H01L 2356, H01V 300

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045463735

ABSTRACT:
In a temperature sensor of the kind comprising a bipolar transistor (1) having an adjustable constant current source (3) connected between its collector and base regions (7 and 9) and its emitter region (11) connected to the output of a high gain amplifier (5) whose input is derived from the current source (3), the junction between the emitter and base regions (11 and 9) of the transistor is a heterojunction and each of the emitter and base regions (11 and 9) is provided with a metal contact (17 or 19) separated from the associated region by a barrier layer (21 or 23) of an amorphous tantalum iridium alloy. The use of a heterojunction for the transistor emitter-base junction increases the temperature range of the sensor while the barrier layers ensure metallic stability at the high temperature end of the sensor temperature range.

REFERENCES:
patent: 3582324 (1971-06-01), Kunert
patent: 3987480 (1976-10-01), Diguet
patent: 4350994 (1982-09-01), Perepezko
IBM Technical Disclosure Bulletin, vol. 21, #4, Sep. 1978, p. 1753, by Ho et al.

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