Semiconductor device with a super lattice buffer

Details Semiconductor device with a super lattice buffer Semiconductor device with a super lattice buffer

2006-01-03

2006-01-03

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S015000, C257S020000, C257S024000, C257S190000, C257S194000, C257S197000

Reexamination Certificate

active

06982441

ABSTRACT:
A semiconductor device includes a compound semiconductor substrate having a resistivity less than 1.0×108Ohm-cm at least at one surface thereof, a buffer layer formed on the compound semiconductor substrate and having a super lattice structure, and an active layer formed on the buffer layer and having an active element formed therein.

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