Semiconductor device with a split conduction channel

Details Semiconductor device with a split conduction channel Semiconductor device with a split conduction channel

1988-10-31

1990-12-11

Mintel, William

357 2314, 357 232, 357 16, 357 83, 357 53, H01L 2968, H01L 2978, H01L 29161, H01L 2504

Patent

active

049774352

ABSTRACT:
A semiconductor field effect transistor is provided which permits controlling of the phase of carriers between a source region and a drain region formed in a first semiconductor layer. Such control can be used to modulate characteristics such as the electric conductivity and drain current of the transistor. To accomplish this control, a gate electrode is formed over a portion of said first semiconductor layer between the source and drain regions. The gate electrode splits to form first and second branches at a first location adjacent to the source region. These first and second branches subsequently rejoin one another at a second location adjacent to said drain region. When a potential is applied to the gate electrode, it will produce first and second two-dimensional carriers conduction paths at a surface of the portion of the first semiconductor layer under the first and second branches. An arrangement is provided for modifying the phase of carriers passing through the first conduction path relative to the phase of carriers passing through the second conduction path to produce a phase difference for carriers received at the drain region through said first and second conduction paths.

REFERENCES:
patent: 4550330 (1985-10-01), Fowler
Bandyopadhyay et al. "A Novel Quantum Interference Transistor (QUIT) with Extremely Low Power-Delay Product and Very High Transconductance" IEDM 86 pp. 76-79.
Imry et al. "Quantum Interference and the Aharonov-Bohm Effect" Scientific American, Apr. 1989, pp. 56-62.
Datta et al. "Novel Interference Effects between Parallel Quantum Wells", Physical Review Letters, vol. 55, No. 21, Nov. 18, 1985, pp. 2344-2347.
Bandyopadhyay et al., "Aharonov-Bohm Effect in Semiconductor Micro-Structures: Novel Device Possibilities", Superlattices and Microstructures, vol. 2, No. 6, 1986, pp. 539-542.

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