Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2007-08-28
2007-08-28
Lewis, Monica (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S453000, C257S485000
Reexamination Certificate
active
10397177
ABSTRACT:
A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation free energy respectively take negative values. The ohmic metal layer is composed of, for example, a metal material such as molybdenum, titanium, chromium, manganese, zirconium, tantalum, or tungsten.
REFERENCES:
patent: 4224115 (1980-09-01), Nara et al.
patent: 4990994 (1991-02-01), Furukawa et al.
patent: 5442200 (1995-08-01), Tischler
patent: 5635412 (1997-06-01), Baliga et al.
patent: 6365494 (2002-04-01), Rupp et al.
patent: 6410460 (2002-06-01), Shalish et al.
patent: 6468890 (2002-10-01), Bartsch et al.
patent: 6884644 (2005-04-01), Slater, Jr. et al.
patent: 2001/0039105 (2001-11-01), Rupp et al.
patent: 2002/0068488 (2002-06-01), Tuller et al.
patent: 199 39 107 (2000-03-01), None
patent: GB 918393 (1963-02-01), None
patent: 0 789 388 (1997-08-01), None
patent: 2001-53293 (2001-02-01), None
patent: 2004-22796 (2004-01-01), None
patent: WO 00/16382 (2000-03-01), None
“Silicon Carbide Ceramics (SiC)” Shigeyuki Somiya et al, ROHM Co., Ltd., Device Technology Div., Semiconductor R&D Headquarters. Uchida Rokakuho, Sep. 15, 1988, pp. 177-182.
Porter, L. M. et al “A critical review of ohmic and rectifying contacts for silicon carbide” in: Materials Science and Engineering B, Elsevier Sequoia, Lausanne, CH, vol. 34, No. 2 (1995-11), pp. 83-105, XP004000935, ISSN: 0921-5107.
Held, R. et al “SiC Merged p-n/Schottky Rectifiers for High Voltage Applications” in: Materials Science Forum, Aedermannsdorf, CH, vol. 264-268, No. PART 2 (1998), pp. 1057-1060, XP000944900, ISSN:0255-5476.
Hara, S. et al “Control of Schottky and ohmic interfaces by unpinning Fermi level” in: Applied Surface Science, Elsevier, Amsterdam, NL, vol. 117/118 (1997), pp. 394-399, XP000749905, ISSN: 0169-4332.
Edmond, J. A. et al “Electrical Contacts to Beta Silicon Carbide Thin Films” Journal Of The Electrochemical Society, Electrochemical Society. Manchester, New Hampshire, US, vol. 135, No. 2 (1988-02), pp. 359-362, XP000979375, ISSN:0013-4651.
Matsushita Masashi
Okamura Yuji
Lewis Monica
Rabin & Berdo P.C.
Rohm & Co., Ltd.
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