Semiconductor device with a silicide layer

Details Semiconductor device with a silicide layer Semiconductor device with a silicide layer

1995-10-31

1998-01-20

Wallace, Valencia Martin

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 66, 257382, 257412, 437200, H01L 2976, H01L 27108, H01L 2994

Patent

active

057104387

ABSTRACT:
To form a silicide layer excellent in flatness, uniform in film thickness, and less in junction leak, by destroying the natural oxide film which adversely affects a formation of silicide layer of cobalt or nickel. A cobalt layer (7) is formed in a film thickness of 20 nm or less on an electrode layer (4A) of a gate electrode (4) and on source/drain diffusion layers (1, 2), and a nitrogen (8) is injected by the ion implantation at a density of about 1E15/cm.sup.3 with an injection energy of 10 keV or more. At this time, the nitrogens (8) destroy the natural oxide film existing in the interface of the cobalt layer (7) and electrode layer (4A), and in the interface of the cobalt layer (7) and the source/drain diffusion layers (1, 2), and distribute deeply into the electrode layer (4A) and the source/drain diffusion layers (1, 2). Later, by a silicide forming reaction of cobalt, a silicide layer (6) is formed. Since the natural oxide film does not exist, the silicide forming reaction proceeds uniformly. Instead of the nitrogen (8), fluorine or silicon may be also used.

REFERENCES:
patent: 4640004 (1987-02-01), Thomas et al.
patent: 4793896 (1988-12-01), Douglas
patent: 4829363 (1989-05-01), Thomas et al.

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