Semiconductor device with a resistor of polycrystalline silicon

Details Semiconductor device with a resistor of polycrystalline silicon Semiconductor device with a resistor of polycrystalline silicon

1983-05-25

1986-10-28

James, Andrew J.

357 59, H01L 2702

Patent

active

046202129

ABSTRACT:
A semiconductor device has a first insulating film formed on a semiconductor substrate. A first group of parallel first unit resistor elements are made of a first layer of polycrystalline silicon and formed on and attached to the first insulating film. A second insulating film is formed over the first unit resistor elements and the surface of the first insulating film which is between the first unit resistor elements. A second group of parallel second unit resistor elements are made of a second layer of polycrystalline silicon which are formed on the second insulating film. Each of the resistor elements in both groups is formed with contact portions at opposite ends thereof. A plurality of groups of wiring layers provide connections between (1) the contact portions at one end of the first unit resistor elements, (2) the contact portions at one end of the second unit resistor elements, (3) between the contact portions at the other ends of the first unit resistor elements, and (4) the contact portions at the other ends of the second unit resistor elements, respectively. A first input/output conductor is connected to the contact portion of one unit resistor element, and a second input/output conductor is connected to the contact portion of another unit resistor element, both being selected from among the first and second groups of unit resistor elements whereby they are formed into a single resistor.

Affiliated with

Also associated with

Rating

Semiconductor device with a resistor of polycrystalline silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with a resistor of polycrystalline silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with a resistor of polycrystalline silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1349576