Semiconductor device with a photodetector switching device grown

Details Semiconductor device with a photodetector switching device grown Semiconductor device with a photodetector switching device grown

1991-10-16

1993-06-29

Quach, T. N.

Fishing, trapping, and vermin destroying

437 59, 437 84, 437915, H01L 21335

Patent

active

052234460

ABSTRACT:
A semiconductor device is disclosed which comprises a normally-off first MOSFET, a normally-off second MOSFET connected between the gate and source of the first MOSFET, a diode connected between the gate and source of the second MOSFET, a resistor and an optoelectric transducer array, both of which are connected in parallel with each other between the gate and drain of the second MOSFET, wherein all of the components are formed on a single semiconductor chip. Also disclosed is a semiconductor device comprising a normally-off first MOSFET, a normally-on second MOSFET connected between the gate and source of the first MOSFET, a first resistor and a diode, both of which are connected in series between the source and drain of the second MOSFET, a second resistor connected between the gate and source of the second MOSFET, an optoelectric transducer array connected between the gate of the second MOSFET and the terminal which is positioned between the first resistor and the diode, wherein all of the components are formed on a single semiconductor chip.
Further disclosed is a method for manufacturing a semiconductor device comprising a normally-off first MOSFET, a normally-off second MOSFET connected between the gate and source of the first MOSFET, a diode connected between the gate and source of the second MOSFET, a resistor and an optoelectric transducer array, both of which are connected in parallel with each other between the gate and drain of the second MOSFET.

REFERENCES:
patent: 3448344 (1969-06-01), Schuster et al.
patent: 4390790 (1983-06-01), Rodriguez et al.
patent: 4916323 (1990-04-01), Hayashi et al.
Kioi, K., et al., "SOI Photodiode Array Stacked on VDMOS . . . ", IEEE IEDM Tech. Dig., 1987, pp. 460-463.

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