Semiconductor device with a photodetector switching device

Details Semiconductor device with a photodetector switching device Semiconductor device with a photodetector switching device

1989-11-28

1992-04-14

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Signal isolator

307311, G02B 2700, H03K 342

Patent

active

051050900

ABSTRACT:
A semiconductor device is disclosed which comprises a normally-off first MOSFET, a normally-off second MOSFET connected between the gate and source of the first MOSFET, a diode connected between the gate and source of the second MOSFET, a resistor and an optoelectric transducer array, both of which are connected in parallel with each other between the gate and drain of the second MOSFET, wherein all of the components are formed on a single semiconductor chip. Also disclosed is a semiconductor device comprising a normally-off first MOSFET, a normally-on second MOSFET connected between the gate and source of the first MOSFET, a first resistor and a diode, both of which are connected in series between the source and drain of the second MOSFET, a second resistor connected between the gate and source of the second MOSFET, an optoelectric transducer array connected between the gate of the second MOSFET and the terminal which is positioned between the first resistor and the diode, wherein all of the components are formed on a single semiconductor chip.

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patent: 4665316 (1987-05-01), Hodges
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K. Kioi et al., International Electron Devices Meeting, pp. 460-463, Dec. 6-9, 1987, "SOI Photodiode Array Stacked on VDMOS for Optical Switching".

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